Discrete Semiconductor Products

IKY40N120CH3XKSA1

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IGBT, 80 A, 2 V, 500 W, 1.2 KV, TO-247, 4 PINS

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Discrete Semiconductor Products

Active

IGBT, 80 A, 2 V, 500 W, 1.2 KV, TO-247, 4 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	IKY40N120CH3XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	190 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-4
Power - Max [Max]	500 W
Reverse Recovery Time (trr)	350 ns
Supplier Device Package	PG-TO247-4
Switching Energy	2.18 mJ, 1.3 mJ
Td (on/off) @ 25°C [custom]	30 ns
Td (on/off) @ 25°C [custom]	280 ns
Test Condition	600 V, 12 Ohm, 40 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Switching Energy	Current - Collector (Ic) (Max) [Max]	Gate Charge	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Package / Case	Test Condition	Mounting Type	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]
INFINEON IKY40N120CH3XKSA1	175 °C	-40 °C	PG-TO247-4	1.3 mJ 2.18 mJ	80 A	190 nC	350 ns	1200 V	30 ns	280 ns	TO-247-4	12 Ohm 15 V 40 A 600 V	Through Hole	2.35 V	500 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1200 V 80 A 500 W Through Hole PG-TO247-4

Technical documentation and resources