Specification	SSM6K810R,LXHF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	430 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	69 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM6K810R Series

Part	Vgs(th) (Max) @ Id	Mounting Type	Technology	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Grade	Qualification
Toshiba Semiconductor and Storage SSM6K810R,LF	2.5 V	Surface Mount	MOSFET (Metal Oxide)	20 V	6-SMD Flat Leads	3.5 A	3.2 nC	100 V	69 mOhm	N-Channel	1.5 W	430 pF	175 °C	4.5 V 10 V	6-TSOP-F
Toshiba Semiconductor and Storage SSM6K810R,LXHF	2.5 V	Surface Mount	MOSFET (Metal Oxide)	20 V	6-SMD Flat Leads	3.5 A	3.2 nC	100 V	69 mOhm	N-Channel	1.5 W	430 pF	175 °C	4.5 V 10 V	6-TSOP-F	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4730	$ 1.09

General part information

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, TSOP6F

Technical documentation and resources