
Discrete Semiconductor Products
PNE200100EPE-QZ
ActiveNexperia USA Inc.
RECTIFIERS 200 V, 10 A HYPERFAST RECOVERY RECTIFIER
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Discrete Semiconductor Products
PNE200100EPE-QZ
ActiveNexperia USA Inc.
RECTIFIERS 200 V, 10 A HYPERFAST RECOVERY RECTIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PNE200100EPE-QZ |
|---|---|
| Capacitance @ Vr, F | 99 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | CFP15B |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 960 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PNE200100EPE-Q Series
High power density, hyperfast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources