Discrete Semiconductor Products

SIJ420DP-T1-GE3

Obsolete

MOSFET N-CH 20V 50A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 50A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIJ420DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	90 nC
Input Capacitance (Ciss) (Max)	3630 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	62.5 W, 4.8 W
Rds On (Max)	2.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.4 V

Part	Gate Charge (Max)	Package / Case	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Drain to Source Voltage (Vdss)	Package Name	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIJ420DP-T1-GE3	90 nC	PowerPAK® SO-8	Surface Mount	4.8 W 62.5 W	20 V	3630 pF	N-Channel	-55 °C	150 °C	10 V	4.5 V	MOSFET (Metal Oxide)	20 V	PowerPAK® SO-8	2.6 mOhm	2.4 V	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.77	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 50A (Tc) 4.8W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available