Discrete Semiconductor Products

SPU08P06P

Obsolete

MOSFET P-CH 60V 8.83A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 8.83A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU08P06P

Current - Continuous Drain (Id) @ 25°C	8.83 A
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	420 pF
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs [Max]	0.3 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]
INFINEON SPU08P06P	Through Hole	13 nC	PG-TO251-3	42 W	60 V	4 V	IPAK TO-251-3 Short Leads TO-251AA	420 pF	MOSFET (Metal Oxide)	P-Channel	8.83 A	0.3 mOhm

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General part information

P-Channel 60 V 8.83A (Ta) 42W (Tc) Through Hole PG-TO251-3

Technical documentation and resources

No documents available