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PG-TO262-3-1
Discrete Semiconductor Products

IPI50R140CPXKSA1

Obsolete
INFINEON

HIGH POWER_LEGACY

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PG-TO262-3-1
Discrete Semiconductor Products

IPI50R140CPXKSA1

Obsolete
INFINEON

HIGH POWER_LEGACY

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI50R140CPXKSA1
Current - Continuous Drain (Id) @ 25°C23 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs64 nC
Input Capacitance (Ciss) (Max) @ Vds2540 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)192 W
Rds On (Max) @ Id, Vgs140 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
20374$ 0.00

Description

General part information

IPI50R Series

N-Channel 500 V 23A (Tc) 192W (Tc) Through Hole PG-TO262-3-1

Documents

Technical documentation and resources