Discrete Semiconductor Products

SUP25P10-138-GE3

Obsolete

MOSFET N-CH 100V 16.3A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 16.3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP25P10-138-GE3

Current - Continuous Drain (Id) (Tc)	16.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2100 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	73.5 W, 3.1 W
Rds On (Max)	13.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Power Dissipation (Max)	Package Name	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)
Vishay Dale SUP25P10-138-GE3	6 V	10 V	2100 pF	Through Hole	MOSFET (Metal Oxide)	N-Channel	100 V	13.8 mOhm	3.1 W 73.5 W	TO-220AB	20 V	60 nC	-55 °C	150 °C	TO-220-3	16.3 A	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 16.3A (Tc) 3.1W (Ta), 73.5W (Tc) Through Hole TO-220AB

Technical documentation and resources