Discrete Semiconductor Products

AUIRFSA8409-7P

Obsolete

MOSFET N-CH 40V 523A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 523A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFSA8409-7P

Current - Continuous Drain (Id) @ 25°C	523 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	460 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	13975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.69 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology
INFINEON AUIRFSA8409-7TRL	13975 pF	Automotive	40 V	0.69 mOhm	20 V	523 A	Surface Mount	10 V	375 W	N-Channel	175 °C	-55 °C	AEC-Q101	PG-TO263-7	3.9 V	460 nC	D2PAK (6 Leads + Tab) TO-263-7	MOSFET (Metal Oxide)
INFINEON AUIRFSA8409-7P	13975 pF	Automotive	40 V	0.69 mOhm	20 V	523 A	Surface Mount	10 V	375 W	N-Channel	175 °C	-55 °C	AEC-Q101	PG-TO263-7	3.9 V	460 nC	D2PAK (6 Leads + Tab) TO-263-7	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 40 V 523A (Tc) 375W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources