Discrete Semiconductor Products

RSJ450N04TL

NRND

MOSFETS 10V DRIVE NCH MOSFET

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Discrete Semiconductor Products

NRND

MOSFETS 10V DRIVE NCH MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RSJ450N04TL

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs [Max]	13.5 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Rohm Semiconductor RSJ450N04TL	13.5 mOhm	2400 pF	20 V	3 V	N-Channel	43 nC	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 W	10 V	Surface Mount	MOSFET (Metal Oxide)	LPTS	45 A	40 V

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General part information

MOSFETS 10V DRIVE NCH MOSFET

Technical documentation and resources