IRF1324PBF
NRNDMOSFET TRANSISTOR, N CHANNEL, 195 A, 24 V, 0.0012 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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IRF1324PBF
NRNDMOSFET TRANSISTOR, N CHANNEL, 195 A, 24 V, 0.0012 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF1324PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 195 A |
| Drain to Source Voltage (Vdss) | 24 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7590 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 1.5 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF1324 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources