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TL431BFDT-QR
Circuit Protection

PESD2ETH1GT-QR

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Freescale Semiconductor - NXP

AUTOMOTIVE LOW SPEED IVN

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TL431BFDT-QR
Circuit Protection

PESD2ETH1GT-QR

Active
Freescale Semiconductor - NXP

AUTOMOTIVE LOW SPEED IVN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPESD2ETH1GT-QR
ApplicationsEthernet
Bidirectional Channels2
Capacitance @ Frequency1.8 pF
Current - Peak Pulse (10/1000µs)2.3 A
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Line ProtectionFalse
QualificationAEC-Q101
Supplier Device PackageTO-236AB
TypeZener
Voltage - Reverse Standoff (Typ)24 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.31
100$ 0.18
500$ 0.17
1000$ 0.12
Digi-Reel® 1$ 0.40
10$ 0.31
100$ 0.18
500$ 0.17
1000$ 0.12
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
9000$ 0.09
30000$ 0.09
75000$ 0.09

Description

General part information

PESD2ETH-X Series

Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package.

Documents

Technical documentation and resources