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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

IDW30C65D2XKSA1

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INFINEON

650 V, 30 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-247 PACKAGE

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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

IDW30C65D2XKSA1

Active
INFINEON

650 V, 30 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIDW30C65D2XKSA1
Current - Average Rectified (Io) (per Diode)15 A
Current - Reverse Leakage @ Vr40 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-247-3
Reverse Recovery Time (trr)32 ns
Speed500 ns, 200 mA
Supplier Device PackagePG-TO247-3-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 204$ 2.45
Tube 1$ 3.24
10$ 2.11
240$ 1.30
720$ 1.14
1200$ 1.08
2160$ 1.02
5040$ 1.01
NewarkEach 1$ 3.64
10$ 2.23
100$ 1.87
720$ 1.57
1200$ 1.54
2640$ 1.50
5040$ 1.49

Description

General part information

IDW30C65 Series

Rapid 2switching 650 V, 30 A emitter controlledpower silicon diodesin common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.