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8-Power TDFN
Discrete Semiconductor Products

BSZ215CHXTMA1

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INFINEON

OPTIMOS™ N/P DUAL POWER MOSFET -20 V,20 V ; PQFN 3.3 X 3.3 PACKAGE; 150 MOHM; LTI (LEAD TIP INSPECTION

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8-Power TDFN
Discrete Semiconductor Products

BSZ215CHXTMA1

Active
INFINEON

OPTIMOS™ N/P DUAL POWER MOSFET -20 V,20 V ; PQFN 3.3 X 3.3 PACKAGE; 150 MOHM; LTI (LEAD TIP INSPECTION

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Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ215CHXTMA1
ConfigurationN and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C5.1 A, 3.2 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]2.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]419 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]2.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs55 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.03
10$ 1.30
100$ 0.88
500$ 0.70
1000$ 0.64
2000$ 0.59
Digi-Reel® 1$ 2.03
10$ 1.30
100$ 0.88
500$ 0.70
1000$ 0.64
2000$ 0.59
N/A 4977$ 1.89
Tape & Reel (TR) 5000$ 0.55
MouserN/A 1$ 1.84
10$ 1.17
25$ 1.04
100$ 0.79
250$ 0.75
500$ 0.62
1000$ 0.53
2500$ 0.53
5000$ 0.49
NewarkEach (Supplied on Full Reel) 5000$ 0.51

Description

General part information

BSZ215 Series

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources

No documents available