Discrete Semiconductor Products

R5016FNX

NRND

MOSFETS TRANS MOSFET N-CH 500V 16A

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFETS TRANS MOSFET N-CH 500V 16A

Technical Specifications

Parameters and characteristics for this part

Specification	R5016FNX

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs [Max]	325 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Operating Temperature	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor R5016FNX	N-Channel	1700 pF	46 nC	5 V	TO-220FM	500 V	MOSFET (Metal Oxide)	325 mOhm	TO-220-3 Full Pack	150 °C	Through Hole	30 V	16 A	50 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.51
Mouser	N/A	500	$ 5.27
		1000	$ 5.04

General part information

MOSFETS TRANS MOSFET N-CH 500V 16A

Technical documentation and resources

No documents available