Specification	BF821-QR

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	300 V

BF821-Q Series

PNP high voltage transistor

Part	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package
Nexperia USA Inc. BF821-QR	PNP	10 nA	150 °C	300 V	60 MHz	SC-59 SOT-23-3 TO-236-3	50 mA	50	Surface Mount	800 mV	250 mW	TO-236AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.08

General part information

PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources