Discrete Semiconductor Products

SSM3H137TU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET + ACTIVE CLAMP ZENER, 34 V, 2.0 A, 0.24 Ω@10V, SOT-323F(UFM)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET + ACTIVE CLAMP ZENER, 34 V, 2.0 A, 0.24 Ω@10V, SOT-323F(UFM)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3H137TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	34 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	119 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET + Active Clamp Zener, 34 V, 2.0 A, 0.24 Ω@10V, SOT-323F(UFM)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	FET Type
Toshiba Semiconductor and Storage SSM3H137TU,LF	4 V	10 V	MOSFET (Metal Oxide)	3 nC	150 °C	34 V	2 A	UFM	240 mOhm	119 pF	20 V	1.7 V	Surface Mount	N-Channel

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General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET + Active Clamp Zener, 34 V, 2.0 A, 0.24 Ω@10V, SOT-323F(UFM)

Technical documentation and resources