Discrete Semiconductor Products

SIZF5302DT-T1-RE3

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MOSFET 2N-CH 30V 28.1A PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 28.1A PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF5302DT-T1-RE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	28.1 A, 100 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	22.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1030 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerPair™
Power - Max	3.8 W, 48.1 W
Rds On (Max) @ Id, Vgs [Max]	3.2 mOhm
Supplier Device Package	PowerPAIR® 3x3FS
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Power - Max	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Configuration	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIZF5302DT-T1-RE3	22.2 nC	2 V	Surface Mount	3.8 W 48.1 W	30 V	3.2 mOhm	1030 pF	PowerPAIR® 3x3FS	2 N-Channel (Dual)	12-PowerPair™	-55 °C	150 °C	MOSFET (Metal Oxide)	28.1 A 100 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 28.1A (Ta), 100A (Tc) 3.8W (Ta), 48.1W (Tc) Surface Mount PowerPAIR® 3x3FS

Technical documentation and resources