Discrete Semiconductor Products

BSZ096N10LS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 13.5 MOHM;

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

BSZ096N10LS5ATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 13.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ096N10LS5ATMA1

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Rds On (Max) @ Id, Vgs	9.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSZ096 Series

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
INFINEON BSZ096N10LS5ATMA1	MOSFET (Metal Oxide)	150 °C	-55 °C	8-PowerTDFN	20 V	22 nC	N-Channel	Surface Mount	2100 pF	9.6 mOhm	100 V	4.5 V 10 V	2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.16
		10	$ 1.39
		100	$ 0.94
		500	$ 0.75
		1000	$ 0.69
		2000	$ 0.64
	Digi-Reel®	1	$ 2.16
		10	$ 1.39
		100	$ 0.94
		500	$ 0.75
		1000	$ 0.69
		2000	$ 0.64
	N/A	4718	$ 1.71
	Tape & Reel (TR)	5000	$ 0.61
Newark	Each (Supplied on Cut Tape)	1	$ 1.80
		10	$ 1.31
		25	$ 1.19
		50	$ 1.05
		100	$ 0.92
		250	$ 0.85
		500	$ 0.78
		1000	$ 0.66

Description

General part information

BSZ096 Series

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.