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INFINEON IMZA65R039M1HXKSA1
Discrete Semiconductor Products

IMZA75R027M1HXKSA1

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INFINEON

THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY

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INFINEON IMZA65R039M1HXKSA1
Discrete Semiconductor Products

IMZA75R027M1HXKSA1

Active
INFINEON

THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIMZA75R027M1HXKSA1
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)15 V, 20 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1668 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max) [Max]234 W
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackagePG-TO247-4
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]23 V
Vgs (Max) [Min]-5 V
Vgs(th) (Max) @ Id5.6 V
PartTechnologyGate Charge (Qg) (Max) @ VgsFET TypeDrive Voltage (Max Rds On, Min Rds On)Operating Temperature [Max]Operating Temperature [Min]Vgs (Max) [Min]Vgs (Max) [Max]Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Vgs(th) (Max) @ IdMounting TypeSupplier Device PackagePackage / CaseInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]
SiC (Silicon Carbide Junction Transistor)
49 nC
N-Channel
15 V
20 V
175 °C
-55 °C
-5 V
23 V
60 A
25 mOhm
750 V
5.6 V
Through Hole
PG-TO247-4
TO-247-4
1668 pF
234 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 204$ 13.60
Tube 1$ 14.76
10$ 13.56
30$ 13.00
120$ 11.45
270$ 10.89
510$ 10.19
1020$ 9.35
NewarkEach 1$ 14.91
10$ 14.19
25$ 13.90
50$ 12.92
100$ 12.40
480$ 11.37
720$ 11.12

Description

General part information

IMZA75R027 Series

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.

Documents

Technical documentation and resources