Discrete Semiconductor Products

KSA1241YTU

Obsolete

TRANS PNP 50V 2A IPAK

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Discrete Semiconductor Products

Obsolete

TRANS PNP 50V 2A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	KSA1241YTU

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1 W
Supplier Device Package	IPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSA1241YTU	Through Hole	500 mV	PNP	120 hFE	1 µA	IPAK TO-251-3 Short Leads TO-251AA	2 A	IPAK	150 °C	1 W	50 V	100 MHz
ON Semiconductor KSA1201YTF	Surface Mount	1 V	PNP		100 nA	TO-243AA	800 mA	SOT-89-3	150 °C	1 W	120 V	120 MHz	120 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 1 W Through Hole IPAK

Technical documentation and resources