Discrete Semiconductor Products

SI2306-TP

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MOSFET N-CH 30V 3.16A SOT23

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 3.16A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI2306-TP

Current - Continuous Drain (Id) @ 25°C	3.16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	750 mW
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max) [Max]	FET Type	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Micro Commercial Components SI2306-TP	750 mW	N-Channel	Surface Mount	MOSFET (Metal Oxide)	30 V	65 mOhm	10 V	3.16 A	SOT-23	3 V	4.5 nC	SC-59 SOT-23-3 TO-236-3	305 pF	20 V	-55 °C	150 °C

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General part information

N-Channel 30 V 3.16A (Ta) 750mW Surface Mount SOT-23

Technical documentation and resources