Discrete Semiconductor Products

IKP01N120H2XKSA1

Obsolete

IGBT 1200V 3.2A 28W TO220-3

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 3.2A 28W TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKP01N120H2XKSA1

Current - Collector (Ic) (Max) [Max]	3.2 A
Current - Collector Pulsed (Icm)	3.5 A
Gate Charge	8.6 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3
Power - Max [Max]	28 W
Reverse Recovery Time (trr)	83 ns
Supplier Device Package	PG-TO220-3-1
Switching Energy	140 µJ
Td (on/off) @ 25°C	370 ns, 13 ns
Test Condition	1 A, 800 V, 241 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Supplier Device Package	Mounting Type	Switching Energy	Test Condition	Package / Case	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)
INFINEON IKP01N120H2XKSA1	3.2 A	28 W	83 ns	1200 V	-40 °C	150 °C	8.6 nC	PG-TO220-3-1	Through Hole	140 µJ	1 A 15 V 241 Ohm 800 V	TO-220-3	13 ns 370 ns	2.8 V	3.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.61

General part information

IGBT 1200 V 3.2 A 28 W Through Hole PG-TO220-3-1

Technical documentation and resources