Discrete Semiconductor Products

IDB23E60ATMA1

Obsolete

DIODE STD 600V 41A PGTO26332

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Discrete Semiconductor Products

Obsolete

DIODE STD 600V 41A PGTO26332

Technical Specifications

Parameters and characteristics for this part

Specification	IDB23E60ATMA1

Current - Average Rectified (Io)	41 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	120 ns
Speed	500 ns, 200 mA
Supplier Device Package	PG-TO263-3-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
INFINEON IDB23E60ATMA1	175 ░C	-55 °C	200 mA 500 ns	Standard	600 V	Surface Mount	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	41 A	120 ns	PG-TO263-3-2	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 41A Surface Mount PG-TO263-3-2

Technical documentation and resources