Discrete Semiconductor Products

IPP16CN10NGHKSA1

NRND

MOSFET N-CH 100V 53A TO220-3

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Discrete Semiconductor Products

NRND

MOSFET N-CH 100V 53A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP16CN10NGHKSA1

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
INFINEON IPP16CN10NGHKSA1	100 V	20 V	48 nC	TO-220-3	PG-TO220-3	53 A	16.5 mOhm	N-Channel	3220 pF	10 V	MOSFET (Metal Oxide)	100 W	4 V	175 °C	-55 °C	Through Hole

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General part information

N-Channel 100 V 53A (Tc) 100W (Tc) Through Hole PG-TO220-3

Technical documentation and resources