Zenode.ai Logo
Beta
PG-TO220-3-1
Discrete Semiconductor Products

IPP100N08N3GXKSA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 10 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
PG-TO220-3-1
Discrete Semiconductor Products

IPP100N08N3GXKSA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 10 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP100N08N3GXKSA1
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds2410 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)100 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
Tube 1$ 2.73
10$ 1.76
100$ 1.21
500$ 0.97

Description

General part information

IPP100 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources