Specification	KSD471ACYTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

KSD471A Series

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Transistor Type	Frequency - Transition	Power - Max [Max]	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor KSD471ACYTA	100 nA	150 °C	NPN	130 MHz	800 mW	Through Hole	TO-92-3	30 V	500 mV	1 A	120	TO-226-3 TO-92-3
ON Semiconductor KSD471ACYTA	100 nA	150 °C	NPN	130 MHz	800 mW	Through Hole	TO-92-3	30 V	500 mV	1 A	120	TO-226-3 TO-92-3
ON Semiconductor KSD471ACGTA	100 nA		NPN	130 MHz	800 mW	Through Hole	TO-92-3	30 V	500 mV	1 A	200	TO-226-3 TO-92-3	-55 °C	150 °C
ON Semiconductor KSD471AYBU	100 nA		NPN	130 MHz	800 mW	Through Hole	TO-92-3	30 V	500 mV	1 A	120	TO-226-3 TO-92-3	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources