Discrete Semiconductor Products

PBSS4480XZ

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TRANS GP BJT NPN 80V 4A 2500MW 4-PIN(3+TAB) SOT-89 T/R AUTOMOTIVE AEC-Q101

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 80V 4A 2500MW 4-PIN(3+TAB) SOT-89 T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4480XZ

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	120 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	550 mW
Qualification	AEC-Q100
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	270 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

80 V, 4 A NPN low VCEsat transistor

Part	Vce Saturation (Max) @ Ib, Ic	Qualification	Package / Case	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Nexperia USA Inc. PBSS4480X,135	270 mV	AEC-Q100	TO-243AA	150 MHz	4 A	150 °C	Surface Mount	NPN	80 V	100 nA	1.6 W	Automotive
Nexperia USA Inc. PBSS4480XZ	270 mV	AEC-Q100	TO-243AA	120 MHz	4 A	150 °C	Surface Mount	NPN	80 V	100 nA	550 mW	Automotive	250

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN low VCEsattransistor in a SOT89 (SC-62) medium power and flat lead plastic package.

Technical documentation and resources