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MKZ18V - Diodes
Discrete Semiconductor Products

TDTC123J,LM

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 2.2 KΩ/47 KΩ, SOT-23(SOT23)

MKZ18V - Diodes
Discrete Semiconductor Products

TDTC123J,LM

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 2.2 KΩ/47 KΩ, SOT-23(SOT23)

Technical Specifications

Parameters and characteristics for this part

SpecificationTDTC123J,LM
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]320 mW
Resistor - Base (R1)2.2 kOhm
Supplier Device PackageSOT-23-3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.02
6000$ 0.02
9000$ 0.02
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.01
MouserN/A 1$ 0.15
10$ 0.08
100$ 0.04
1000$ 0.03
3000$ 0.02
9000$ 0.02
24000$ 0.02
45000$ 0.02
99000$ 0.02

Description

General part information

TDTC123J Series

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3