Discrete Semiconductor Products

AOB1606L

Obsolete

MOSFET N-CH 60V 12A/178A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 12A/178A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB1606L

Current - Continuous Drain (Id) @ 25°C	12 A, 178 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	102 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	2.1 W
Power Dissipation (Max)	417 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOB1606L	102 nC	20 V	60 V	Surface Mount	175 °C	-55 °C	3.7 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4500 pF	10 V	TO-263 (D2PAK)	12 A 178 A	6 mOhm	2.1 W	417 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 12A (Ta), 178A (Tc) 2.1W (Ta), 417W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources