Discrete Semiconductor Products

SI7620DN-T1-GE3

Obsolete

MOSFET N-CH 150V 13A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 13A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7620DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	13 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.8 W, 5.2 W
Rds On (Max)	126 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

Part	Power Dissipation (Max)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)
Vishay Dale SI7620DN-T1-GE3	3.8 W 5.2 W	PowerPAK® 1212-8	20 V	13 A	MOSFET (Metal Oxide)	PowerPAK® 1212-8	N-Channel	10 V	126 mOhm	-55 °C	150 °C	Surface Mount	15 nC	150 V	600 pF	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 150 V 13A (Tc) 3.8W (Ta), 5.2W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available