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BCV29,115
Discrete Semiconductor Products

BCV29,115

Active
Nexperia USA Inc.

DARLINGTON TRANSISTORS PNP DARLINGTON TRANSISTOR

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BCV29,115
Discrete Semiconductor Products

BCV29,115

Active
Nexperia USA Inc.

DARLINGTON TRANSISTORS PNP DARLINGTON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBCV29,115
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20000
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.3 W
QualificationAEC-Q101
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 485$ 0.90
MouserN/A 1$ 0.61
10$ 0.42
100$ 0.29
500$ 0.22
1000$ 0.20
2000$ 0.17
5000$ 0.14
10000$ 0.14

Description

General part information

BCV29 Series

NPN small-signal Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.