
Discrete Semiconductor Products
BCV29,115
ActiveNexperia USA Inc.
DARLINGTON TRANSISTORS PNP DARLINGTON TRANSISTOR
Deep-Dive with AI
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Discrete Semiconductor Products
BCV29,115
ActiveNexperia USA Inc.
DARLINGTON TRANSISTORS PNP DARLINGTON TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BCV29,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20000 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power - Max [Max] | 1.3 W |
| Qualification | AEC-Q101 |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BCV29 Series
NPN small-signal Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources