Discrete Semiconductor Products

SI7457DP-T1-GE3

Obsolete

MOSFET P-CH 100V 28A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 100V 28A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7457DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	5230 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83.3 W, 5.2 W
Rds On (Max)	42 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Rds On (Max)	Power Dissipation (Max)	Vgs(th) (Max)	FET Type	Package Name	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Technology
Vishay Dale SI7457DP-T1-E3	-55 °C	150 °C	5230 pF	Surface Mount	42 mOhm	5.2 W 83.3 W	4 V	P-Channel	PowerPAK® SO-8	100 V	20 V	6 V	10 V	160 nC	28 A	PowerPAK® SO-8	MOSFET (Metal Oxide)
Vishay Dale SI7457DP-T1-GE3	-55 °C	150 °C	5230 pF	Surface Mount	42 mOhm	5.2 W 83.3 W	4 V	P-Channel	PowerPAK® SO-8	100 V	20 V	6 V	10 V	160 nC	28 A	PowerPAK® SO-8	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 100 V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources