Discrete Semiconductor Products

FRA807G-BP

Obsolete

DIODE GEN PURP 1KV 8A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1KV 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	FRA807G-BP

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components FRA807G-BP	Standard	TO-220-2	150 °C	-55 °C	5 µA	1000 V	500 ns	200 mA 500 ns	8 A	Through Hole	TO-220AC	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 8A Through Hole TO-220AC

Technical documentation and resources