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SOT1220
Discrete Semiconductor Products

BUK4D122-20PX

Active
Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

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Search across all available documentation for this part.

Documents20 V, P-channel Trench MOSFETplastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body+9
SOT1220
Discrete Semiconductor Products

BUK4D122-20PX

Active
Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Documents20 V, P-channel Trench MOSFETplastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body+9

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK4D122-20PX
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020MD-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.12

Description

General part information

BUK4D122-20P Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.