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SOT223
Discrete Semiconductor Products

BF722-QX

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Nexperia USA Inc.

NPN HIGH VOLTAGE TRANSISTOR

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SOT223
Discrete Semiconductor Products

BF722-QX

Active
Nexperia USA Inc.

NPN HIGH VOLTAGE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBF722-QX
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50
Frequency - Transition60 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1.2 W
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.23

Description

General part information

BF722-Q Series

NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package.