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PBSS4032NX-QF
Discrete Semiconductor Products

PBSS4032NX-QF

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Nexperia USA Inc.

30 V, 4.7 A NPN LOW VCESAT TRANSISTOR

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PBSS4032NX-QF
Discrete Semiconductor Products

PBSS4032NX-QF

Active
Nexperia USA Inc.

30 V, 4.7 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4032NX-QF
Current - Collector (Ic) (Max) [Max]4.7 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300
Frequency - Transition145 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]0.6 W
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic375 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.31

Description

General part information

PBSS4032NX-Q Series

NPN low VCEsattransistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.