Specification	T2N7002AK,LM

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.35 nC
Input Capacitance (Ciss) (Max) @ Vds	17 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	320 mW
Rds On (Max) @ Id, Vgs	3.9 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

T2N7002 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-23(SOT23)

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature	Technology	Vgs (Max)	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage T2N7002BK,LM	0.6 nC	4.5 V 10 V	1.5 Ohm	400 mA	SC-59 SOT-23-3 TO-236-3	SOT-23-3	60 V	Surface Mount	150 °C	MOSFET (Metal Oxide)	20 V	320 mW	N-Channel	2.1 V	40 pF
Toshiba Semiconductor and Storage T2N7002AK,LM	0.35 nC	4.5 V 10 V	3.9 Ohm	200 mA	SC-59 SOT-23-3 TO-236-3	SOT-23-3	60 V	Surface Mount	150 °C	MOSFET (Metal Oxide)	20 V	320 mW	N-Channel	2.1 V	17 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-23(SOT23)

Technical documentation and resources