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DFN0606-3
Discrete Semiconductor Products

PMH1200UPEH

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Nexperia USA Inc.

DFN0606 MOSFET P CHANNEL ENHANCEMENT 30V 520MA 3-PIN DFN SURFACE MOUNT T/R

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DFN0606-3
Discrete Semiconductor Products

PMH1200UPEH

Active
Nexperia USA Inc.

DFN0606 MOSFET P CHANNEL ENHANCEMENT 30V 520MA 3-PIN DFN SURFACE MOUNT T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMH1200UPEH
Current - Continuous Drain (Id) @ 25°C520 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]33 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)380 mW
Power Dissipation (Max)2.8 W
Rds On (Max) @ Id, Vgs1.6 Ohm
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.33
10$ 0.25
25$ 0.22
100$ 0.14
250$ 0.12
500$ 0.09
1000$ 0.07
2500$ 0.06
5000$ 0.06
Digi-Reel® 1$ 0.33
10$ 0.25
25$ 0.22
100$ 0.14
250$ 0.12
500$ 0.09
1000$ 0.07
2500$ 0.06
5000$ 0.06
N/A 4637$ 0.16
Tape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04
100000$ 0.04
250000$ 0.04

Description

General part information

PMH1200 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.