Discrete Semiconductor Products

PMH1200UPEH

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MOSFET P-CH 30V 520MA DFN0606-3

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Discrete Semiconductor Products

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MOSFET P-CH 30V 520MA DFN0606-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMH1200UPEH

Current - Continuous Drain (Id) @ 25°C	520 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	33 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	380 mW, 2.8 W
Rds On (Max) @ Id, Vgs	4.5 V, 1.6 Ohm, 410 mA
Supplier Device Package	DFN0606-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case
Freescale Semiconductor - NXP PMH1200UPEH	950 mV	1 nC	Surface Mount	MOSFET (Metal Oxide)	10 V	30 V	520 mA	-55 °C	150 °C	2.8 W 380 mW	1.6 Ohm 4.5 V 410 mA	P-Channel	1.5 V 4.5 V	33 pF	DFN0606-3	3-XFDFN

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General part information

P-Channel 30 V 520mA (Tc) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Technical documentation and resources