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Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7Q4R9-40HJ
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3144 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]84 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.9 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3000$ 1.30

Description

General part information

BUK7Q4R9-40H Series

Standard level N-Channel MOSFET in a small MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.