Discrete Semiconductor Products

SI7818DN-T1-E3

LTB

MOSFET N-CH 150V 2.2A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 150V 2.2A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7818DN-T1-E3

Current - Continuous Drain (Id) (Ta)	2.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	135 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Current - Continuous Drain (Id) (Ta)	Package Name	Vgs (Max)	Mounting Type	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Technology	Rds On (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case
Vishay Dale SI7818DN-T1-E3	2.2 A	PowerPAK® 1212-8	20 V	Surface Mount	30 nC	6 V	10 V	1.5 W	MOSFET (Metal Oxide)	135 mOhm	4 V	-55 °C	150 °C	150 V	N-Channel	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 2.22	1m+
		10	$ 1.42
		100	$ 0.96
		500	$ 0.77
		1000	$ 0.71
	Digi-Reel®	1	$ 2.22	1m+
		10	$ 1.42
		100	$ 0.96
		500	$ 0.77
		1000	$ 0.71
	N/A	247	$ 2.20	1m+
	Tape & Reel (TR)	3000	$ 0.63	1m+
		6000	$ 0.60

3D models and CAD resources for this part

General part information

N-Channel 150 V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources