Discrete Semiconductor Products
PBSS4160DPN,115
ActiveNexperia USA Inc.
60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS4160DPN,115
ActiveNexperia USA Inc.
60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4160DPN,115 |
|---|---|
| Current - Collector (Ic) (Max) | 770 mA, 870 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150, 200 |
| Frequency - Transition | 185 MHz, 220 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 420 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 6-TSOP |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV, 330 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.67 | |
Description
General part information
PBSS4160DPN Series
NPN/PNP low VCEsattransistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources