Discrete Semiconductor Products

SI3099-TP

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N-CHANNEL MOSFET,SOT-23

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SI3099-TP

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.72 nC
Input Capacitance (Ciss) (Max) @ Vds	61 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs [Max]	408 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]
MCC (Micro Commercial Components) SI3099-TP	408 mOhm	61 pF	30 V	SC-59 SOT-23-3 TO-236-3	1.5 V	2.5 V 10 V	1.72 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount	SOT-23	150 °C	-55 °C	1.1 A	12 V	830 mW
MCC (Micro Commercial Components) SI3099-TP	408 mOhm	61 pF	30 V	SC-59 SOT-23-3 TO-236-3	1.5 V	2.5 V 10 V	1.72 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount	SOT-23	150 °C	-55 °C	1.1 A	12 V	830 mW

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General part information

N-Channel 30 V 1.1A 830mW Surface Mount SOT-23

Technical documentation and resources