Discrete Semiconductor Products

SUP36N20-54P-E3

Obsolete

MOSFET N-CH 200V 36A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 36A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP36N20-54P-E3

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	127 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	166 W, 3.12 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SUP36N20-54P-E3	10 V 15 V	N-Channel	53 mOhm	25 V	127 nC	3.12 W 166 W	200 V	-55 °C	175 ░C	TO-220-3	Through Hole	3100 pF	4.5 V	MOSFET (Metal Oxide)	36 A	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 36A (Tc) 3.12W (Ta), 166W (Tc) Through Hole TO-220AB

Technical documentation and resources