Discrete Semiconductor Products

SUP36N20-54P-E3

Obsolete

MOSFET N-CH 200V 36A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 36A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP36N20-54P-E3

Current - Continuous Drain (Id) (Tc)	36 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	10 V
Drive Voltage (Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	127 nC
Input Capacitance (Ciss) (Max)	3100 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	3.12 W, 166 W
Rds On (Max)	53 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4.5 V

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package / Case	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Rds On (Max)	Technology	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Drain to Source Voltage (Vdss)
Vishay Dale SUP36N20-54P-E3	Through Hole	-55 °C	175 °C	127 nC	TO-220-3	10 V	15 V	TO-220AB	3100 pF	3.12 W 166 W	4.5 V	53 mOhm	MOSFET (Metal Oxide)	25 V	36 A	N-Channel	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.92	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 36A (Tc) 3.12W (Ta), 166W (Tc) Through Hole TO-220AB

Technical documentation and resources