Discrete Semiconductor Products

SI2301AHE3-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	SI2301AHE3-TP

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.41 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	438 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	51 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs (Max)	Qualification	Power Dissipation (Max) [Max]	Grade	Rds On (Max) @ Id, Vgs [Max]
Micro Commercial Components SI2301-TP	P-Channel	20 V	2.5 V 4.5 V	Surface Mount	MOSFET (Metal Oxide)	880 pF	120 mOhm	-55 °C	150 °C	1 V	1.25 W	14.5 nC	2.8 A	SOT-23	SC-59 SOT-23-3 TO-236-3	8 V
Micro Commercial Components SI2301AHE3-TP	P-Channel	20 V	1.8 V 4.5 V	Surface Mount	MOSFET (Metal Oxide)	438 pF		-55 °C	150 °C	1 V		5.41 nC	3.4 A	SOT-23	SC-59 SOT-23-3 TO-236-3	10 V	AEC-Q101	1 W	Automotive	51 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.14

General part information

P-Channel 20 V 3.4A (Ta) 1W Surface Mount SOT-23

Technical documentation and resources