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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB530N15N3GATMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; D2PAK TO-263 PACKAGE; 53 MOHM;

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB530N15N3GATMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; D2PAK TO-263 PACKAGE; 53 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB530N15N3GATMA1
Current - Continuous Drain (Id) @ 25°C21 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]887 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)68 W
Rds On (Max) @ Id, Vgs53 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPB530 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources