Discrete Semiconductor Products

SIHB8N50D-GE3

LTB

MOSFET N-CH 500V 8.7A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 8.7A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB8N50D-GE3

Current - Continuous Drain (Id) (Tc)	8.7 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	527 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	156 W
Rds On (Max)	850 mOhm, 850 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Rds On (Max)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Max)	FET Type	Package Name	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIHB8N50D-GE3	850 mOhm 850 mOhm	5 V	Surface Mount	-55 °C	150 °C	527 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	156 W	30 V	30 nC	N-Channel	TO-263 (D2PAK)	MOSFET (Metal Oxide)	8.7 A	500 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.74	1m+
	Tube	1000	$ 0.72	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 8.7A (Tc) 156W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources