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SOT666
Discrete Semiconductor Products

NX3008CBKV,115

NRND
Nexperia USA Inc.

30 / 30 V, 400 / 220 MA N/P-CHANNEL TRENCH MOSFET

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SOT666
Discrete Semiconductor Products

NX3008CBKV,115

NRND
Nexperia USA Inc.

30 / 30 V, 400 / 220 MA N/P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNX3008CBKV,115
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C220 mA, 400 mA
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.68 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-563, SOT-666
Power - Max [Max]500 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.4 Ohm
Supplier Device PackageSOT-666
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1413$ 0.55
MouserN/A 1$ 0.40
10$ 0.27
100$ 0.17
500$ 0.13
1000$ 0.10
2000$ 0.09
4000$ 0.07
8000$ 0.07
24000$ 0.06

Description

General part information

NX3008CBKV Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.