
Discrete Semiconductor Products
NX3008CBKV,115
NRNDNexperia USA Inc.
30 / 30 V, 400 / 220 MA N/P-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
NX3008CBKV,115
NRNDNexperia USA Inc.
30 / 30 V, 400 / 220 MA N/P-CHANNEL TRENCH MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | NX3008CBKV,115 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220 mA, 400 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.68 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-563, SOT-666 |
| Power - Max [Max] | 500 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm |
| Supplier Device Package | SOT-666 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NX3008CBKV Series
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources