Integrated Circuits (ICs)

MT53E1536M64D8HJ-046 WT:C

Active

Micron Technology Inc.

DRAM, MOBILE LPDDR4, 96 GBIT, 1.5G X 64BIT, 2.133 GHZ, TFBGA, 556 PINS

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN

Integrated Circuits (ICs)

MT53E1536M64D8HJ-046 WT:C

Active

Micron Technology Inc.

DRAM, MOBILE LPDDR4, 96 GBIT, 1.5G X 64BIT, 2.133 GHZ, TFBGA, 556 PINS

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E1536M64D8HJ-046 WT:C

Clock Frequency	2.133 GHz
Memory Format	DRAM
Memory Organization	1.5 M
Memory Size	12 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-25 °C
Supplier Device Package	556-WFBGA
Supplier Device Package [x]	12.4
Supplier Device Package [y]	12.4
Technology	SDRAM - Mobile LPDDR4

MT53E1536 Series

Part	Memory Organization	Memory Size	Technology	Memory Format	Qualification	Grade	Memory Type	Clock Frequency	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply	Mounting Type	Memory Interface	Write Cycle Time - Word, Page	Package / Case	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time	Supplier Device Package [y]	Supplier Device Package [x]
Micron Technology Inc. MT53E1536M64D8HJ-046 AUT:C	1.5 M	12 MB	SDRAM - Mobile LPDDR4	DRAM
Micron Technology Inc. MT53E1536M32D4DT-046 AIT:A	1.5 G	6 MB	SDRAM - Mobile LPDDR4	DRAM	AEC-Q100	Automotive	Volatile	2.133 GHz	-40 °C	95 °C	1.1 V
Micron Technology Inc. MT53E1536M32D4DE-046 AIT:B	1.5 G	6 MB	SDRAM - Mobile LPDDR4X	DRAM	AEC-Q100	Automotive	Volatile	2.133 GHz	-40 °C	95 °C		Surface Mount	Parallel	18 ns	200-TFBGA	200-TFBGA (10x14.5)	1.06 V	1.17 V	3.5 ns
Micron Technology Inc. MT53E1536M32D4DE-046 AIT:C	1.5 G	6 MB	SDRAM - Mobile LPDDR4	DRAM	AEC-Q100	Automotive	Volatile	2.133 GHz	-40 °C	95 °C		Surface Mount	Parallel	18 ns	200-TFBGA	200-TFBGA (10x14.5)	1.06 V	1.17 V	3.5 ns
Micron Technology Inc. MT53E1536M32D4DE-046 WT:C	1.5 G	6 MB	SDRAM - Mobile LPDDR4X	DRAM			Volatile	2.133 GHz	-25 °C	85 °C		Surface Mount	Parallel	18 ns	200-TFBGA	200-TFBGA (10x14.5)	1.06 V	1.17 V	3.5 ns
Micron Technology Inc. MT53E1536M64D8HJ-046 AAT:B TR	1.5 M	12 MB	SDRAM - Mobile LPDDR4	DRAM	AEC-Q100	Automotive	Volatile	2.133 GHz	-40 C	105 ░C		Surface Mount				556-WFBGA				12.4	12.4
Micron Technology Inc. MT53E1536M32D4DT-046 WT:A TR	1.5 G	6 MB	SDRAM - Mobile LPDDR4	DRAM			Volatile	2.133 GHz	-30 °C	85 °C	1.1 V
Micron Technology Inc. MT53E1536M32D4DE-046 WT:C TR	1.5 G	6 MB	SDRAM - Mobile LPDDR4X	DRAM			Volatile	2.133 GHz	-25 °C	85 °C		Surface Mount	Parallel	18 ns	200-TFBGA	200-TFBGA (10x14.5)	1.06 V	1.17 V	3.5 ns
Micron Technology Inc. MT53E1536M64D8HJ-046 WT:C	1.5 M	12 MB	SDRAM - Mobile LPDDR4	DRAM			Volatile	2.133 GHz	-25 °C	85 °C		Surface Mount				556-WFBGA				12.4	12.4
Micron Technology Inc. MT53E1536M64D8HJ-046 WT:B	1.5 M	12 MB	SDRAM - Mobile LPDDR4	DRAM			Volatile	2.133 GHz	-25 °C	85 °C		Surface Mount				556-WFBGA				12.4	12.4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1360	$ 70.32
	N/A	0	$ 162.92

Description

General part information

MT53E1536 Series

MT53E1536M64D8HJ-046 WT:C is a mobile LPDDR4 SDRAM. The 12Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet