Specification	MJPE31CHZ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-277, 3-PowerDFN
Power - Max [Max]	1.6 W
Supplier Device Package	CFP15B
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJPE31CH Series

100 V, 3 A NPN high power bipolar transistor

Part	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type
Nexperia USA Inc. MJPE31CHZ	130 MHz	100 V	120	TO-277 3-PowerDFN	1.6 W	1.2 V	NPN	175 °C	1 µA	CFP15B	3 A	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.14

General part information

NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources