Discrete Semiconductor Products

PMPB95ENEAX

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MOSFET N-CH 80V 2.8A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET N-CH 80V 2.8A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB95ENEAX

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	504 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	15.6 W, 1.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Grade	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package
Freescale Semiconductor - NXP PMPB95ENEAX	N-Channel	2.8 A	504 pF	1.6 W 15.6 W	MOSFET (Metal Oxide)	-55 °C	150 °C	AEC-Q101	105 mOhm	20 V	2.7 V	6-UDFN Exposed Pad	4.5 V 10 V	Automotive	14.9 nC	80 V	Surface Mount	DFN2020MD-6

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General part information

N-Channel 80 V 2.8A (Ta) 1.6W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources